| PART |
Description |
Maker |
| M29F512 M29F512B M29F512B45K1T M29F512B45NZ1T M29F |
512 Kbit 64Kb x8 / Bulk Single Supply Flash Memory
512 Kbit 64Kb x8, Bulk Single Supply Flash Memory
512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| C30997-050 C30997-250 |
512 KBIT (64KB X8) UV EPROM and OTP EPROM 光电
|
TE Connectivity, Ltd.
|
| M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF
1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8）紫外线存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储
512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8）紫外线存储器和OTP存储
512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储
SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储
CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20
CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
Fuses, 100mA 250V SB 5X15 BULK
CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85
CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2
CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 8200UF 450V ELECT SCREW TERM
GLASS TUBE FOR DS80 IRON PKG/4
SERV SWITCH USB COAX CPU CABLES 50 FT
SERV SWITCH USB COAX CPU CABLES 35 FT
512 KBIT (64KB X8) UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDIP28
64K X 8 OTPROM, 100 ns, PDSO28
64K X 8 OTPROM, 150 ns, PQCC32
64K X 8 OTPROM, 120 ns, PDIP28
64K X 8 OTPROM, 120 ns, PQCC32
64K X 8 OTPROM, 200 ns, PQCC32
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| UHR-5/4000-D48 UHR-12/1650-D48 UHR-12/1650-D12 UHR |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 型DC - DC电压转换
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 型DC - DC电压转换
|
EEPROM
NIC Components, Corp.
PLX Technology, Inc.
|
| M27W512-100K6 M27W512-100K6TR |
512 Kbit (64 Kbit x8) low-voltage OTP EPROM
|
STMicroelectronics
|
| M24512 M24512BN 6757 MM24512-MJ5T MM24512-MJ6T MM2 |
From old datasheet system
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I2C Bus EEPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27W512-100B6E M27W512-100F6 M27W512-100K6 M27W512 |
512 KBIT (64KB X8) LOW VOLTAGE OTP EPROM
Hex D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SOIC 0 to 70
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
Quadruple D-Type Positive-Edge-Triggered Flip-Flops With Clear 16-SO 0 to 70 512千位4K的8）低压紫外线EPROM和检察官办公室存储器
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| CY14C512PA13 |
512-Kbit (64 K x 8) SPI nvSRAM
|
Cypress Semiconductor
|
| M24C16-125 M24C08-125 M24C02-125 M24C04-125 |
Automotive 16-Kbit, 8-Kbit, 4-Kbit and 2-Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
| CY14B512J2-SXIT CY14C512J12 |
512-Kbit (64 K × 8) Serial (I2C) nvSRAM
|
Cypress Semiconductor
|
